power management.features including two devices in us6.(ultra super mini type with 6 leads) simplify circuit design. reduce a quantity of parts and manufacturing process. dim millimeters a b dg us6 2.00 0.20 1.25 0.1 2.1 0.1 0.2+0.10/-0.05 0-0.1 0.9 0.1 0.65 0.15+0.1/-0.05 b1 h c t g 1 3 2 b b1 d a h t 6 4 c c a1 1.3 0.1 a1 5 + _ + _ + _ + _ + _ 1. q emitter4. q source 3. q drain5. q gate 6. q collector 12 2. q base 11 2 2 2008. 9. 23 1/6 semiconductor technical data KTX421U revision no : 1 q 1 maximum rating (ta=25 ) 12 3 6 54 q1 q2 characteristic symbol rating unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 6 v collector current i c 500 ma i cp * 1 a collector power dissipation p c * 150 mw junction temperature t j 150 storage temperature range t stg -55 150 q 2 maximum rating (ta=25 ) bs 123 4 5 6 lot no. type name marking equivalent circuit (top view) * single pulse pw=1ms.** 120mw per element must not be exceeded. each terminal mounted on a recommended land. this transistor is electrostatic sensitive device.please handle with caution. characteristic symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 20 v dc drain current i d 100 ma drain power dissipation p c ** 150 mw channel temperature t ch 150 storage temperature range t stg -55 150 ** 120mw per element must not be exceeded. each terminal mounted on a recommended land. epitaxial planar npn transistor n channel mos field effect transistor downloaded from: http:///
KTX421U revision no : 1 2008. 9. 23 2/6 q 1 electrical characteristics (ta=25 ) q 2 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =15v, i e =0 - - 100 na emitter cut-off current i ebo v eb =6v, i c =0 - - 100 na collector-base breakdown voltage v (br)cbo i c =10 a 15 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma 12 - - v emitter-base breakdown voltage v (br)ebo i e =10 a 6 - - v dc current gain h fe v ce =2v, i c =10ma 270 - 680 - collector-emitter saturation voltage v ce(sat) i c =200ma, i b =10ma - 90 250 mv transition frequency f t v ce =2v, i c =10ma, f t =100mhz - 320 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 7.5 - pf characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = 20v, v ds =0v - - 1 a drain-source breakdown voltage v (br)dss i d =100 a, v gs =0v 30 - - v drain cut-off current i dss v ds =30v, v gs =0v - - 1 a gate threshold voltage v th v ds =3v, i d =0.1ma 0.5 - 1.5 v forward transfer admittance |y fs | v ds =3v, i d =10ma 25 - - ms drain-source on resistance r ds(on) i d =10ma, v gs =2.5v - 4 7 input capacitance c iss v ds =3v, v gs =0v, f=1mhz - 8.5 - pf reverse transfer capacitance c rss v ds =3v, v gs =0v, f=1mhz - 3.3 - pf output capacitance c oss v ds =3v, v gs =0v, f=1mhz - 9.3 - pf switching time turn-on time t on v dd =5v, i d =10ma, v gs =0 5v - 50 - ns turn-off time t off - 160 - ns downloaded from: http:///
2008. 9. 23 3/6 KTX421U revision no : 1 c collector current i (ma) base-emitter voltage v (v) be i - v cb e ta=125 c v =2v i /i =20 ce v =2v ce v =2v ce cb i /i =20 cb i /i =50 cb i /i =20 c b i /i =10 c b ta=25 c ta=-40 c ta=125 c ta=25 c ta=-40 c ta=25 c ta=125 c ta=25 c ta=-40 c ta=25 c ta=125 c ta=25 c ta=-40 c 10 1k 30 50 100 300 500 v - i c collector current i (ma) ce(sat) c ce(sat) collector-emitter saturation voltage v (mv) 13 1 10 30 100 300 1k 3 5 10 30 50 100 300 500 1k v - i c collector current i (ma) ce(sat) c ce(sat) collector-emitter saturation voltage v (mv) 13 1 10 30 100 300 1k 3 5 10 30 50 100 300 500 1k 0 1 0.5 1.0 1.5 3 5 10 30 50 100 300 500 1k f - i c collector current i (ma) tc t transition frequency f (mhz) 13 10 30 100 300 1 k 100 10k 300 500 1k 3k 5k v - i c collector current i (ma) be(sat) c be(sat) base-emitter saturation voltage v (mv) 13 10 30 100 300 1k 10 1k 30 50 100 300 500 13 10 30 100 300 1k dc current gain h fe collector current i (ma) c h - i fe c q (npn transistor) 1 downloaded from: http:///
2008. 9. 23 4/6 KTX421U revision no : 1 c - v , c - v cb collector-base voltage v (v) eb emitter-base voltage v (v) ob c ob cb ib collector input capacitance c (pf) ob collector output capacitance c (pf) 0.1 0.3 1 131 0 30 100 3 5 10 30 50 100 300 500 1k ib c ib eb i =0af=1mhz ta=25 c e collector power dissipation p (mw) 0 c 0 ambient temperature ta ( c) pc - ta 25 50 75 100 125 50 100 150 200 150 downloaded from: http:///
2008. 9. 23 5/6 KTX421U revision no : 1 dr drain reverse current i (ma) drain-source votage v (v) ds ds dr i - v drain-source voltage v (v) drain current i (ma) d 0 ds 0 i - v dd s drain current i (ma) forward transfer admittance 1 d y - i drain-source voltage v (v) drain current i (ma) d ds (low voltage region) 2 common source ta=25 c v =1.2v gs 0.2 0 0 0.1 ta=25 c common v =0.9v gs fs d fs y (ms) 35 10 30 50 common source v =3v ds 4681 01 2 20 0.2 0.3 0.4 0.5 0.6 0.4 0.6 0.8 1.0 i - v ds d 0 ta=25 c 5 10 30 50 100 300 100 40 60 80 100 1.4v 2.5v 2.2v 2.0v 1.8v 1.6v source 1.0v 1.05v 1.1v 1.15v 1.2v 2.5v 0.01 0.1 1 10 100 0.03 0.3 3 30 10 drain current i (ma) gate-source votage v (v) 0.1 1 0.01 0 0.03 1 0.3 3 gs ta=25 c common source d i - v 100 30 ds v =3v gs d 2 345 ta=-25 c ta=100 c common source ta=25 c f=1mhz v =0 drain-source voltage v (v) capacitance c (pf) 0.1 1 0.5 0.3 3 c - v gs ds 20 10 5 ds c rss oss c c iss 1 53 10 5030 100 -0.4 -0.8 -1.2 -1.6 common sourcev =0 gs ta=25 c d i s g dr q (n channel mos field effect transistor) 2 downloaded from: http:///
2008. 9. 23 6/6 KTX421U revision no : 1 v - i d drain current i (ma) drain-source on voltage ds(on) d ds(on) v (v) switching time t (ns) drain current i (ma) d d t - i common source v =5v dd p - ta d ambient temperature ta ( c) 02040 100 d 0 drain power dissipation p (mw) 60 80 100 120 140 160 200 300 50 150 250 d.u. 1% <= v :t , t < 5ns in rf (z =50 ) out ta=25 c i v 5v 0 10 s v r out d v in l 50 dd ta=25 c out (z =50 ) r v :t , t < 5ns d.u. 1% v =5vcommon source 10 s 5v 0 dd l v 50 in v r v i d out in dd = < f v in 5v 90% dd v 0 out v in v 10% 10% 90% ds v (on) on t off t f t r t switching time test circuit 131 0 1 0 0 30 5 common source ta=25 c gs v =2.5v 50 10 1k 30 50 100 300 500 on r t off t f t 2 0.005 0.01 0.03 0.05 0.1 0.3 0.5 1 53 0 10 50 3 1 100 t downloaded from: http:///
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